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| GMM 3x120-0075X2 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ G1 S1 G3 S3 L1 G2 S2 G4 S4 L1L2+ G5 S5 L2 G6 S6 L2L3L3 L3+ VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25C TC = 90C TC = 25C (diode) TC = 90C (diode) Conditions Conditions TVJ = 25C to 150C Maximum Ratings 75 20 110 85 110 80 V V A A A A Applications AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment Features Characteristic Values min. typ. 4.0 7.2 max. 4.9 8.4 1 0.2 (TVJ = 25C, unless otherwise specified) RDSon 1) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) t 2.0 4.0 50 115 30 30 130 100 500 100 0.20 0.50 0.01 1.3 1.0 1.6 on chip level at VGS = 10 V VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = 20 V; VDS = 0 V TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125C a t VGS = 10 V; VDS = 36 V; ID = 25 A e inductive load VGS = 10 V; VDS = 30 V ID = 80 A; RG = 39 ; TJ = 125C n VDS = ID*(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. t with heat transfer paste (IXYS test setup) iv mW mW V A A A nC nC nC ns ns ns ns mJ mJ mJ K/W K/W e * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings 20110307 (c) 2011 IXYS All rights reserved 1-4 GMM 3x120-0075X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VSD trr QRM IRM (diode) IF = 80 A; VGS = 0 V IF = 80 A; -diF/dt = 800 A/s; VR = 30 V 0.9 55 0.9 30 1.2 V ns C A Component Symbol IRMS Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 Maximum Ratings 75 A TJ Tstg VISOL FC Symbol Rpin to chip 1) IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions min. -55...+175 -55...+125 1000 50 - 250 typ. tbd coupling capacity between shorted pins and back side metallization 160 max. C C V~ N Characteristic Values mW CP Weight 1) 25 VDS = ID*(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t 20110307 iv pF g e 2-4 (c) 2011 IXYS All rights reserved GMM 3x120-0075X2 t e n Part Name & Packing Unit Marking t a t Leads SMD Ordering Standard Part Marking Delivering Mode Blister Base Qty. 28 Ordering Code 507 508 20110307 GMM 3x120-0075X2 - SMD GMM 3x120-0075X2 IXYS reserves the right to change limits, test conditions and dimensions. iv (c) 2011 IXYS All rights reserved e 3-4 GMM 3x120-0075X2 IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t 20110307 iv (c) 2011 IXYS All rights reserved e 4-4 |
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